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LumiGNtech co., Ltd.

Company

  
홈 Company History

History

2007

06
LumiGNtech Co., Ltd. Established at Business incubator building of KICET
(Korea institute of ceramic engineering and technology)
09
Signed University-Industry Cooperation Agreement with Dong-Eui university Opened Research office at Technology Innovation Center of Electronic Ceramics in Dong-Eui University

2008

12
Established R&D Center (Certificate No. : recognized by MKE)
(Ministry of Knowledge Economy)

2009

03
Acquired the certification of a specialized company for components and materials
04
Installed HVPE unit 1 (2" x 3ea)
04
Acquired the certification of Venture business from KIBO
(Korea Technology Finance Corporation)

2010

06
Received SMBA(Small&medium Business Administration) Administrator's Award at the Entrepreneur Festival Korea 2010

2012

02
Concluded the investment Agreement with Seoul Investment Partners
08
Exported LLO GaN templates and GaN substrates to Japan

2013

03
Acquired the certification of Green technology
(Technology of single crystal GaN growth using HVPE), Certificate No. : GT-13-00043)
07
Concluded the investment Agreement with KB investment and Seoul Partners
08
Relocated R&D Center at Gwang Myeong Si, Gyong Gi-do
10
HVPE unit 2 installation (2" x 7ea) (Growth Capa. 1,000pcs/month)
11
Exported LLO GaN templates and GaN substrates to USA

2014

07
Start to service of Laser Lift off Process for GaN template ( Research Center of N-company, Japan)
11
Completed development of AlN template ( <650 arcsec for FWHM (102) of RC)
11
Started to develop AlN Template ( <300 arcsec for FWHM (102) of RC) supported by Small and Medium Business Administration.

2015

02
Relocated Headquarters ( Integrated Headquarters and R&D Center)
08
Installed HVPE Unit 4 (High temperature (~1500 ℃, RF heating type, 2” x1ea )

2016

06
Start to research AlN template on Patterned Sapphire Substrate

2017

01
Completed development of AlN template ( <300 arcsec for FWHM (102) of RC)
07
Started to develop AlGaN template ( <450 arcsec for FWHM (102) of RC) supported by Ministry of SMEs and Startups.

2018

01
Approach Pre-Marketing of AlN Template for Japan, USA and Taiwan.

2019

05
Start to develop AlN / AlGaN/ GaN template
09
Completed development of AlGaN template ( <450 arcsec for FWHM (102) of RC)
11
Start to research Ga2O3 template

2020

02
Installed HVPE Unit 4 (Vertical Flow Type 2” x1ea )
02
Start to develop GaN substrate by self-separation method with pre-laser treatment supported by Gyeonggi-do technology development program
04
Supplied the AlN Template for Mass Production of E company in Tiawan
11
Start to Develop AlN template on Patterned Sapphire Substrate supported by Ministry of SMEs and Startups

2021

01
Completed development of GaN substrate by self-separation method with pre-laser treatment
04
Start to Develop Gallium Oxide epi-wafer supported by the Nano & Material Technology Development Program funded by Ministry of Science and ICT

2022

02
Start to develop GaN substrate by self-separation method with New structure (AlN/ Carbon) template
11
Completed development of AlN template on Patterned Sapphire Substrate