Conference |
Date |
Title |
IWGO 2022, October 23-27, 2022 |
2022.10 |
The effect of reactant gases on the surface morphologies of as grown surfaces in the homoepitaxial growth of (001) β-Ga2O3by halide vapor phase epitaxy |
IWUMD 2022, May 23-26, 2022 |
2022.05 |
Growth of AlN layer on Hole-type PSS for DUV LED by HVPE |
IWUMD 2022, May 23-26, 2022 |
2022.05 |
High quality AlN layer Growth with O2/H2 on c-plain sapphire substrate by HVPE |
ICNS-12, July 24-28, 2017 |
2017.07 |
Characteristics comparison between GaN layer grown on patterned sapphire substrate and planer sapphire substrate by HVPE |
IWN 2016, October 2-7, 2016 |
2016.10 |
High Quality AlN Epi-layer Grown by HVPE System |
International Symposium on Single Crystals and Wafers, June 18-10,2016 |
2016.06 |
Multi-step growth of a-plane GaN epitaxial layer on r-plane sapphire substrate by HVPE method |
ICNS-11 August 30-September 4, 2015 |
2015.08 |
The effects of growth temperature and V/III ratios for a-plane GaN epilayer on r-plane sapphire grown by HVPE |
ICNS-11 August 30-September 4, 2015 |
2015.08 |
“High quality AlN layer regrown on AlN nano structure by using hydride vapor phase epitaxy” |
ICNS-11 August 30-September 4, 2015 |
2015.08 |
The properties of chemical mechanical polished AlN epi-layer on sapphire grown by HVPE at relatively low temperature |
Korea Association of Grystal Growth (KACG) June 03-05 ,2015 |
2015.06 |
The effects of changing growth temperature for aplane GaN epitaxial layrer grown by HVPE |
IWN 2014 August 24-29, 2014 |
2014.08 |
Temperature and ratio effects on the growth of a-plane GaN/ r-plane sapphire by HVPE method |
IWN 2014 August 24-29, 2014 |
2014.08 |
The effect of nitridation in AlN Growth on GaN Templlate by HVPE |
17th ICMOVPE, July 13~18, 2014 |
2014.07 |
- |
17th ICMOVPE, July 13~18, 2014 |
2014.07 |
Improvement of surface morphology for AlN epi-layer on sapphire by the controlled nitridation and V/III flow ratio in HVPE system |
CGCT-6, June 11~14, 2014 |
2014.06 |
Optical properties and crystallinity of aluminum nitrride epilayers grown by HVPE |
CGCT-6, June 11~14, 2014 |
2014.06 |
Absorption coefficient of GaN wafers grown by Hydride Vapor Phase Epitaxy |
CGCT-6, June 11~14, 2014 |
2014.06 |
The effects of the controlled nitridation and V/III ratio for AlN epitaxial layer grown on sapphire by HVPE |
CGCT-6, June 11~14, 2014 |
2014.06 |
Improvements of Crystal Quality by Nitridation in AlN Grown on GaN Template by HVPE |
ICAE, November 12-15, 2013 |
2013.11 |
The growth of semi-polar(11-22) GaN layer grown by HVPE with the control of gas flows on the semi-polar (11-22) GaN Template |
ICAE, November 12-15, 2013 |
2013.11 |
Effects of Group V/III ratio and GaN inter-layer on the crystal quality of InN grown by HVPE method |
ICNS-10, August 25-30, 2013 |
2013.08 |
Investigation for the distribution of stress for freestanding GaN after LLO process grown by HVPE |
ICNS-10, August 25-30, 2013 |
2013.08 |
The Control of mechanical bow for GaN substrate grown by HVPE with relatively longer radiius of lattice curvature |
The 2nd international Symposium on Single Crystal and Wafers, June 26-28, 2013 |
2013.06 |
The growth of thick semi-polar(11-22) GaN layer grown by HVPE on the semi-polar (11-22) GaN template |
The 2nd international Symposium on Single Crystal and Wafers, June 26-28, 2013 |
2013.06 |
Optimization of freestanding thick GaN wafer bow grown by HVPE |
The 2nd international Symposium on Single Crystal and Wafers, June 26-28, 2013 |
2013.06 |
Dislocation density of HVPE grown AlN epi-layer on sapphire substrate by X-ray rocking curve measurement |
APWS 2013, May 12-15, 2013 |
2013.05 |
Improvement of AlN layer Growth on sapphire substrate by Relative low temperature HVPE |
The 6th iIntermational Conference onf LED and Solid State Lighting, August.29-30,2012 |
2012.08 |
The effect of chemical mechanical polishing for the removals of the damage layers in the surface preparation of GaN substrate |
The Korean Institute of Electrical and Electronic Material Enginners Annual Conference 2012 |
2012.06 |
Effect of high-temperature AlN buffer layer thickness on the properties of AlGaN epilayer grown by HVPE |
The 1st international Symposium on Single Crystal and Wafers for LED, June 21-22,2012 |
2012.06 |
How to Reduce Manufacturing Cost of Free Standing GaN wafer by HVPE |
The 1st international Symposium on Single Crystal and Wafers for LED, June 21-22,2012 |
2012.06 |
Study for Bowing of Free-Standing GaN Wafer by HVPE |
The 1st international Symposium on Single Crystal and Wafers for LED, June 21-22,2012 |
2012.06 |
Growth and characteriation of The AlxGa1-xN Epilayers grown with the variation of Al input Flux Ratio by HVPE |
ICMOPVE -XVI, May 20-25 2012 |
2012.05 |
Epitaxy of GaN on Si(111) substrate with AlcGa1-xN buffer layer by hydride vapor phase epitaxy method |
ICMOPVE -XVI, May 20-25 2012 |
2012.05 |
Growth and characteriation of The AlxGa1-xN Epilayers grown with the variation of Al input Flux Ratio by HVPE |
2011 Fall Meeting MRS (Material Research Society) November 28-December01, 2011 |
2011.12 |
“Effect of growth conditions on the properties of AlGaN epilayers grown by HVPE” |
2011 ICAE (International Conference on Advanced Electromaterials), November 7-10, 2011 |
2011.11 |
“Growth of high quality GaN epitaxial layer with AlGaN buffer on silicon substrate by HVPE” |
2011 ICAE (International Conference on Advanced Electromaterials), November 7-10, 2011 |
2011.11 |
“Effect of high temperature AlN buffer layer on the properties of AlxGa1-xN epilayer grown by HVPE” |
2011 Fall meeting of Korean Ceramic Society, October 24-25, 2011 |
2011.10 |
“Growth of high quality GaN epitaxial layer with AlGaN buffer on silicon substrate by HVPE” |
2011 IFFM (International Forum on Functional Materials), July 2011 |
2011.07 |
“The effects of growth temperate on the properties of AlGaN Epilayer grown by HVPE” |
2011 KACG International Symposium on Crystal Growth, October 13-15, 2011 |
2011.10 |
“Growth of high quality GaN epitaxial layer with AlGaN buffer on silicon substrate by HVPE” |
2011 Fall meeting of Korean Ceramic Society, October 24-25, 2011 |
2011.10 |
“Effect of growth conditions on the properties of AlGaN epilayers grown by HVPE” |
5th 2011 APWS (Asia-Pacific Workshop on Widegap Semiconductors), May 22-26, 2011 |
2011.05 |
“Crystallinity improvement of GaN template grown by HVPE with the initial growth control” |
5th 2011 APWS (Asia-Pacific Workshop on Widegap Semiconductors), May 22-26, 2011 |
2011.05 |
“Fabrication of high efficiency InGaN/GaN LED on thick GaN template grown by HVPE” |
The 2nd Forum of Nitride semiconductor materials and Devices, April 2011 |
2011.04 |
GaN Wafer development trend |
2011 The Korean Association of Crystal Growth, April 2011 |
2011.04 |
“The effects of growth temperate on the properties of AlGaN Epilayer grown by HVPE” |
The 5th International Conference on LED & Solid State Lighting, April 11-12, 2011 |
2011.04 |
“Improvement of crystalline properties for GaN Template by the control of multi-step growths” |
2011 Korea Conference of Semiconductors, February 2011 |
2011.02 |
“Effect of initial nucleation layer growth conditions on the properties of the GaN Epilayer grown by HVPE” |
2010 The Korean Association of Crystal Growth, May 2010 |
2010.05 |
“Correlation between bowing and Raman shift of heteroepitaxial GaN grown by hydride vapor phase epitaxy |
The 4th International Conference on LED & Solid State Lighting, February 2010 |
2010.02 |
“The effect of GaN layer thickness on the measured FWHM of X-ray rocking curve |
2009 ICNS (International Conference on Nitride Semiconductors), October 18-23, 2009 |
2009.10 |
“Characterization of etch pit density for Gallium Nitride layer grown by HVPE and MOCVD” |
2009 ICNS (International Conference on Nitride Semiconductors), October 18-23, 2009 |
2009.10 |
“Reducing the warpage and dislocation density of GaN template grown by HVPE with gallium droplet treatments” |
2009 Society of LED and Solid State Lighting, January 20-22, 2009 |
2009.01 |
고분해능 X-회절분석에 의한 GaN Template의 결함 분석 |
2008 The Korean Association of Crystal Growth, April 2008. |
2008.04 |
“Effects of patterned sapphire substrates on the bowing of MOCVD Grown GaN template” |
