Application No. |
Title of Invention |
Status |
Application Filing Date |
Registration No. |
Registration Date |
Publication No. |
Publication Date |
1020230096285 |
METHOD OF MANUFACTURING SELF-SEPARABLE SEMICONDUCTOR SUBSTRATE AND SELF-SEPARABLE SEMICONDUCTOR SUBSTRATE MANUFACTURED BY THE METHOD |
Application |
2023.07.24 |
|
|
|
|
1020230075289 |
Ga2O3 crystal film deposition method according to HVPE, deposition apparatus and Ga2O3 crystal film deposition substrate using the same |
Publication |
2023.06.13 |
|
|
1020230095885 |
2023.06.29 |
1020210160047 |
METHOD FOR GROWING NITRIDE FILM |
Publication |
2021.11.19 |
|
|
1020230073549 |
2023.05.26 |
1020120046448 |
Method of manufacturing a substrate |
Registration |
2012.05.02 |
1014202650000 |
2014.07.10 |
1020130044133 |
2013.05.02 |
1020210185166 |
Ga2O3 crystal film deposition method according to HVPE, deposition apparatus and Ga2O3 crystal film deposition substrate using the same |
Registration |
2021.12.22 |
1025460420000 |
2023.06.16 |
|
|
1020110002293 |
Method of manufacturing a substrate |
Registration |
2011.01.10 |
1011785040000 |
2012.08.24 |
1020120080846 |
2012.07.18 |
1020110048838 |
Method of manufacturing a substrate |
Registration |
2011.05.24 |
1011739850000 |
2012.08.08 |
|
|
1020140037524 |
Semiconductor substrate and method of manufacturing the same |
Registration |
2014.03.31 |
1014743730000 |
2014.12.12 |
|
|
1020080035114 |
SUBSTRATE FOR SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME |
Registration |
2008.04.16 |
1009909710000 |
2010.10.25 |
1020090109730 |
2009.10.21 |
1020090105515 |
SUBSTRATE FOR SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME |
Extinguishment |
2009.11.03 |
1011785050000 |
2012.08.24 |
1020110048795 |
2011.05.12 |
1020090074601 |
A BELLOWS ANGLE VALVE WITH A DAMPING CYLINDER |
Extinguishment |
2009.08.13 |
1011130620000 |
2012.01.31 |
1020110017094 |
2011.02.21 |
1020090092251 |
Reaction metal supply Units of Hydride Vapor Phase Epitaxy Reactor |
Extinguishment |
2009.09.29 |
1011442010000 |
2012.05.02 |
1020110034811 |
2011.04.06 |
1020120026686 |
APPARATUS FOR DEPOSITING THIN LAYER |
Extinguishment |
2012.03.15 |
1012484760000 |
2013.03.22 |
1020120034093 |
2012.04.09 |
1020080003160 |
SUBSTRATE FOR SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME AND SEMICONDUCTOR DEVICE |
Extinguishment |
2008.01.10 |
1009454380000 |
2010.02.25 |
1020090077306 |
2009.07.15 |
1020080104550 |
SUBSTRATE FOR SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME |
Extinguishment |
2008.10.24 |
1010187600000 |
2011.02.23 |
1020100045570 |
2010.05.04 |
1020200084854 |
PRODUCTION METHOD FOR MONOCRYSTALINE SUBSTRATE |
Rejection |
2020.07.09 |
|
|
1020220006880 |
2022.01.18 |
1020140019545 |
Semiconductor substrate and method of manufacturing the same |
Rejection |
2014.02.20 |
|
|
1020150020498 |
2015.02.26 |
1020100116685 |
Reaction metal supply units of vertical hydride vapor phase epitaxy reactor |
Rejection |
2010.11.23 |
|
|
1020120055146 |
2012.05.31 |
1020090131785 |
APPARATUS FOR DEPOSITING THIN LAYER |
Rejection |
2009.12.28 |
|
|
1020110075352 |
2011.07.06 |
1020130111508 | SUBSTRATE FOR SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME | Rejection | 2013.09.17 | | | 1020150032403 | 2015.03.26 |
1020120075882 | Reaction metal supply units of vertical hydride vapor phase epitaxy reactor | Rejection | 2012.07.12 | | | 1020140009638 | 2014.01.23 |
